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Quick Detail:
256Kb FRAM Serial Memory
Description:
The FM24C256 is a 256-kilobit nonvolatile memory employing an advanced ferroelectric process. A ferroelectric random access memory or FRAM is nonvolatile and performs reads and writes like a RAM. It provides reliable data retention for 45 years while eliminating the complexities, overhead, and system level reliability problems caused by EEPROM and other nonvolatile memories.
The FM24C256 performs write operations at bus speed. No write delays are incurred. The next bus cycle may commence immediately without the need for data polling. In addition, the product offers write endurance orders of magnitude higher than EEPROM. Also, FRAM exhibits much lower power during writes than EEPROM since write operations do not require an internally elevated power supply voltage for write circuits.
These capabilities make the FM24C256 ideal for nonvolatile memory applications requiring frequent or rapid writes. Examples range from data collection where the number of write cycles may be critical, to demanding industrial controls where the long write time of EEPROM can cause data loss. The combination of features allows more frequent data writing with less overhead for the system.
The FM24C256 is available in a 8-pin EIAJ SOIC package using an industry standard two-wire protocol. Specifications are guaranteed over an industrial temperature range of -40°C to +85°C.
Applications:
256Kbit Ferroelectric Nonvolatile RAM
• Organized as 32,768 x 8 bits
• High Endurance 10 Billion (1010) Read/Writes
• 45 year Data Retention
• NoDelay™ Writes
• Advanced High-Reliability Ferroelectric Process
Fast Two-wire Serial Interface
• Up to 1 MHz Maximum Bus Frequency
• Supports Legacy Timing for 100 kHz & 400 kHz
Low Power Operation
• 5V Operation
• 200 µA Active Current (100 kHz)
• 100 µA Standby Current
Industry Standard Configuration
• Industrial Temperature -40° C to +85° C
• 8-pin EIAJ SOIC
• “Green” Packaging Option
FM24C256-SE - Ramtron International Corporation - 256Kb FRAM Serial Memory
