Quick Detail:
SWITCHMODE Series NPN Silicon Power Transistor
Description:
• High DC Current Gain:
hFE min = 20 at IC = 12 A
• Low VCE(sat), VCE(sat)
max = 0.6 V at IC = 8 A
• Very Fast Switching Times:
TF max = 0.4 [1]s at IC = 25 A
Application:
This device is designed for high speed, high current, high power
applications.
Specifications:
Datasheets | BUV21 |
Product Photos | TO-3 Pkg |
Standard Package | 100 |
Category | Discrete Semiconductor Products |
Family | Transistors (BJT) - Single |
Series | SWITCHMODE™ |
Packaging | Tray |
Transistor Type | NPN |
Current - Collector (Ic) (Max) | 40A |
Voltage - Collector Emitter Breakdown (Max) | 200V |
Vce Saturation (Max) @ Ib, Ic | 1.5V @ 3A, 25A |
BUV21G Datasheet (PDF) - ON Semiconductor - SWITCHMODE Series NPN Silicon Power Transistor
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